 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PN4258 PN4258 PNP Switching Transistor * This device is designed for very high speed saturated switching at collector currents to 100mA. * Sourced from process 65. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Value Units VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range -12 -12 -4.5 -200 - 55 ~ 150 V V V mA C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition IC = -100A, VBE = 0 IC =- 3.0mA, IB = 0 IC = -100A, IE = 0 IE = -100A, IC = 0 VCE = -6.0V, VBE = 0 VCE = -6.0V, VBE = 0, TA = 65C IC = -1.0mA, VCE = -0.5V IC = -10mA, VCE = -3.0V IC = -50mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, VCE = -5.0V, f = 100MHz IC = -10mA, VCE = -10V, f = 100MHz VBE = -0.5V, IC = 0, f = 1.0MHz VBE = -5.0V, IE = 0, f = 1.0MHz -0.75 15 30 30 Min. -12 -12 -12 -4.5 -0.01 -5.0 Max. Units V V V V A A Off Characteristics V(BR)CES Collector-Emitter Breakdown Voltage * VCEO(SUS) V(BR)CBO V(BR)EBO ICES Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics hFE DC Current Gain 120 -0.15 -0.5 -0.95 -1.5 V V V V MHz MHz 3.5 3.0 pF pF VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small Signal Characteristics fT Current Gain Bandwidth Product Ciob Ccb Input Capacitance Collector-Base Capacitance 700 700 (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Electrical Characteristics TA=25C unless otherwise noted Symbol Switching Characteristics ton Turn-on Time td tr toff ts tf ts Delay Time Rise Time Turn-off Time Storage Time Fall Time Storage Time Parameter (Continued) Min. Max. 15 10 15 20 20 10 20 Units ns ns ns ns ns ns ns Test Condition VCC = -1.5V, VBE(off) = 0V IC = -10mA, IB1 = -1.0mA VCC = -1.5V, IC = -10mA, IB1 = IB2 = -10mA IC = -10mA, IB1 = IB2 = -10mA * Pulse Test: Pulse Width 300ms, Duty Cycle 2.0% Thermal Characteristics TA=25C unless otherwise noted Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/C C/W C/W (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Typical Chracteristics VCESAT - COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN vs Collector Current 200 V CE = 1.0V 125 C Voltage vs Collector Current 0.5 0.4 0.3 25 C = 10 150 100 25 C 0.2 125 C 50 - 40 C 0.1 0 0.1 - 40 C 0 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 1 10 I C - COLLECTOR CURRE NT (mA) 100 Figure 1. Typical Pulsed Current Gain vs Collector Current V BEON - BAS E EMITTER ON VOLTAGE (V) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current V BESAT - BASE EMITTE R VOLTAGE (V) Voltage 1.2 1 0.8 = 10 - 40 C vs Collector Current Collector Current 1 - 40 C 0.8 25 C 25 C 125 C 0.6 125 C 0.6 0.4 0.2 0 0.1 0.4 0.2 0 0.1 VCE = 1V 1 10 I C - COLLECTOR CURRE NT (mA) 100 1 10 I C - COLLECTOR CURRE NT (mA) 25 Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current I CBO - COLLE CTOR CURRENT (nA) 100 V 10 CB 700 = 10V P D - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 1 0.1 0.01 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 125 Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Power Dissipation vs Ambient Temperature (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Typical Chracteristics (Continued) 2.8 CAPACITANCE (pF) 2.4 2 F = 1.0 MHz V CE - COLLECTOR VOLTAGE (V) -14 -12 -10 -8 -6 1200 MHz 1500 MHz Cobo I = 0 1.6 C ibo I C = 0 1.2 0 -2 -4 -6 -8 REVERSE BIAS VOLTAGE (V) -10 -4 600 MHz -2 0 0.1 200 MHz 500 MHz 900 MHz 200 MHz 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 7. Input/Output Capacitance vs Reverse Bias Voltage Figure 8. Contours of Constant Gain Bandwidth Produtct (fT) 100 SWITCHING TIMES (ns) 50 20 10 5 2 1 20 SWITCHING TIME S (ns) VCC = -1.5V I C = 10 I B1 = 10 I B2 V BE (O) = 0 ts tf tr td 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 15 I C = 10 mA I B1 = I B2 = 1 mA VCC = -1.5V V BE (O) = 0 10 tr 5 tf 0 -50 ts td 0 50 100 T A - AMBIE NT TEMP ERATURE ( C) 150 Figure 9. Switching Times vs Collector Current VBE(O)- REVERSE BASE-EMITTER VOLTAGE (V) Figure 10. Switching Times vs Ambient Temperature I B1 - TURN-ON BASE CURRENT (mA) Delay Time vs. Turn On Base Current / Reverse Emitter Voltage 4 td = 20 ns 3 Turn-On Base Currents 10 5 2 1 0.5 0.2 0.1 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 t f = 2.0 ns 5.0 ns 10 ns 20 ns V CC = -1.5V 10 ns 8.0 ns 2 5.0 ns 3.0 ns 1 I C = 10 mA VCC = -1.5V 0 0.5 1 2 3 I B1 - TURN ON BASE CURRENT (mA) 4 5 Figure 11. Delay Time vs Turn On Base Current/Reverse Emitter Voltage Figure 12. Rise Time vs Collector and Turn-On Base Currents (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Typical Chracteristics I B1 - TURN-ON BASE CURRENT (mA) 0.5 0.4 0.3 0.2 0.1 0 t s = 12 ns 8.0 ns 5.0 ns (Continued) Turn-On / Turn-Off Base Currents I B1 - TURN-ON BASE CURRENT (mA) VCC = -1.5V I C = 1.0 mA 5 4 3 2 1 0 VCC = -1.5V I C = 10 mA t s = 20 ns 15 ns 10 ns 6.0 ns 3.0 ns 0 0.1 0.2 0.3 0.4 I B2 - TURN-OFF BASE CURRENT (mA) 0.5 0 1 2 3 4 I B2 - TURN-OFF BASE CURRENT (mA) 5 Figure 13. Storage Time vs Turn-On/Turn-Off Base Current Figure 14. Storage Time vs Turn-On/Turn-Off Base Currents Base Currents I B1 - TURN-ON BASE CURRENT (mA) 10 8 6 4 2 0 5.0 ns I B1 - TURN-ON BASE CURRENT (mA) 0.5 t f = 50 ns t s = 20 ns 15 ns 10 ns 0.4 45 ns 0.3 0.2 0.1 0 40 ns VCC = -1.5V I C = 50 mA 0 2 4 6 8 I B2 - TURN-OFF BASE CURRENT (mA) 10 VCC = -1.5V I C = 1.0 mA 0 0.1 0.2 0.3 0.4 I B2 - TURN-OFF BASE CURRENT (mA) 0.5 Figure 15. Storage Time vs Turn-On/Turn-Off Base Current Figure 16. Fall Time vs Turn-On/Turn-Off Base Currents Base Currents I B1 - TURN-ON BASE CURRENT (mA) 5 t f = 6.0 ns 4 3 2 4.0 ns I B1 - TURN-ON BASE CURRENT (mA) 10 t f = 8.0 ns 8 6 4 2 0 6.0 ns 4.0 ns 5.0 ns 3.0 ns 1 0 VCC = -1.5V I C = 10 mA 0 1 2 3 4 I B2 - TURN-OFF BASE CURRENT (mA) 5 VCC = -1.5V I C = 50 mA 0 2 4 6 8 I B2 - TURN-OFF BASE CURRENT (mA) 10 Figure 17. Fall Time vs Turn-On/Turn-Off Base Currents Figure 18. Fall Time vs Turn-On/Turn-Off Base Currents (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Test Circut VBB VCE = -1.5 V 2.2 K 130 VIN PW = 240 ns ZIN = 50 tr 1.0 ns 0.1 F 5.0 K To Sampling Scope ZIN 100 k tr < 1.0 ns 51 tON VBB = ground VIN = - 5.8 V t OFF VBB = 8.0 V VIN = 9.8 V IC = 10 mA, IB1 = 1.0 mA, IB2 = 1.0 mA Figure 1. ton, toff Test Circuit (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN4258 Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
Price & Availability of PN425802
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |